Open Access
| Issue |
E3S Web of Conf.
Volume 401, 2023
V International Scientific Conference “Construction Mechanics, Hydraulics and Water Resources Engineering” (CONMECHYDRO - 2023)
|
|
|---|---|---|
| Article Number | 03075 | |
| Number of page(s) | 6 | |
| Section | Road Construction, Building Structures and Materials | |
| DOI | https://doi.org/10.1051/e3sconf/202340103075 | |
| Published online | 11 July 2023 | |
- A. S. Saidov, A. Yu. Leiderman, Sh. N. Usmonov, and K. T. Kholikov. I–V Characteristic of p–n Structures Based on a Continuous Solid Solution (Si2)1 – x(CdS)x. Semiconductors. Vol. 43(4). pp.416 (2009). [CrossRef] [Google Scholar]
- A. S. Saidov, Sh. N. Usmonov, K. A. Amonov, Sh. Niyazov and A. I. Khudayberdiyeva. Photothermovoltaic Effect in p-Si−n-(Si2)1 – x – y(Ge2)x(ZnSe)y Structure. Applied Solar Energy. Vol. 55(5). pp. 265–268. (2019). [CrossRef] [Google Scholar]
- Mirsagatov S. A., Uteniyazov A. K., and Achilov A. S. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films. Physics of the Solid State, Vol. 54, pp.1751-1763. (2012). [CrossRef] [Google Scholar]
- Mirsagatov S. A., and Sapaev I. B. Photoelectric and electrical properties of a reverse-biased p-Si/n-CdS/n+-CdS heterostructure. Inorganic Materials, Vol. 50, pp.437-442. (2014). [CrossRef] [Google Scholar]
- Mirsagatov S. A., and Sapaev I. B. Mechanism of charge transfer in injection photodetectors based on the M (In)-n-CdS-p-Si-M (In) structure. Physics of the Solid State, Vol. 57, pp.659-674. (2015). [CrossRef] [Google Scholar]
- Markov V. F., Korotcenkov G., and Maskaeva L. N. Thin Films of Wide Band Gap II-VI Semiconductor Compounds: Features of Preparation. In Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors: Volume 1, Materials and Technology, pp. 233-275. Cham: Springer International Publishing. (2023). [Google Scholar]
- Usmonov S. N., Saidov A. S., and Leiderman A. Y. Effect of injection depletion in p-n heterostructures based on solid solutions (Si 2) 1− x− y (Ge 2) x (GaAs) y,(Si 2) 1− x (CdS) x,(InSb) 1− x (Sn 2) x, and CdTe 1− x S x. Physics of the Solid State, Vol. 56, pp. 2401-2407. (2014). [CrossRef] [Google Scholar]
- Bonnet D., and Rabenhorst H. Proc. Int. Conf. Physics and Chemistry of Semiconductor Heterojunction and Layer Structure. (1971). [Google Scholar]
- Uda H., Sonomura H., and Ikegami S. Screen printed CdS/CdTe cells for visible-light-radiation sensor. Measurement Science and Technology, Vol. 8(1), p. 86. (1997). [CrossRef] [Google Scholar]
- Kudii D., Meriuts A., Khrypunova A., Shelest T., Varvianska V., and Zaitsev R. Theoretical Analysis of Optical Properties of CdS/CdTe Film Heterosystems. In 2020 IEEE 4th International Conference on Intelligent Energy and Power Systems (IEPS) (pp. 135-139). IEEE. (2020). [Google Scholar]
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