| Issue |
E3S Web Conf.
Volume 69, 2018
International Conference Green Energy and Smart Grids (GESG 2018)
|
|
|---|---|---|
| Article Number | 01008 | |
| Number of page(s) | 4 | |
| Section | Properties, Regimes and Development of Renewable Energy Sources | |
| DOI | https://doi.org/10.1051/e3sconf/20186901008 | |
| Published online | 27 November 2018 | |
Optimization of surface reflectance for silicon solar cells
National Polytechnic University of Armenia, Teryan str. 105, Yerevan, Armenia
* Corresponding author: agagarm@gmail.com
A study on the formation of black silicon (b-Si) antireflection layers on crystalline Si wafers using SF6/O2gas mixture in a reactive ion etching method is presented. The process is low-temperature, fast and does not depend on the crystallographic orientation of the Si wafer. The b-Si layers have demonstrated average reflectance values of 4% and 5% for monoand polycrystalline Si wafers respectively, feature that is suitable for the fabrication of high efficiency solar cells. Passivation of b-Si antireflection layers by suitable different thin films can significantly reduce needle-like surface recombination losses.
© The Authors, published by EDP Sciences, 2018
This is an open access article distributed under the terms of the Creative Commons Attribution License 4.0 (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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