Issue |
E3S Web Conf.
Volume 198, 2020
2020 10th Chinese Geosynthetics Conference & International Symposium on Civil Engineering and Geosynthetics (ISCEG 2020)
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Article Number | 04011 | |
Number of page(s) | 6 | |
Section | Urban Planning Engineering and Design Application | |
DOI | https://doi.org/10.1051/e3sconf/202019804011 | |
Published online | 26 October 2020 |
The Application of Third Generation Semiconductor in Power Industry
High School Affiliated To Harbin Normal University, Harbin, Herlongjiang, 150080, China
With the rapid development of technologies, the third generation semiconductor is being studied, as it is leading to the significant change in industry like the manufacture of PC, mobile devices, lighting etc. Till now, due to its irreplaceable physical characteristics, third generation semiconductor is applied to lots of fields. This paper analyzes the application of third generation semiconductor, namely, GaN and SiC. Their characteristics including advantages as well as disadvantages will be discussed through reviewing the result of relevant researches. Meanwhile, comparison between the third generation semiconductors and the second as well as the first generation semiconductors is made in this paper. Through the comparison of physical characteristics, recent marketing, production and limitations, the advantages and disadvantages of each semiconductor is analyzed and the suggestion of how to avoid the disadvantage through application is proposed. At last, the future development is predicted. According to the analysis result of this paper, silicon poses more merits. Silicon is not only cheaper but also performs better making it a preference of GaAs, and GaN in the domain of IC. The second generation semiconductor, GaAs, is widely used in the circuits and photoelectric integration. Furthermore, the third semiconductor material GaN is a promising material for power switching and communication and has the great possibility to play a crucial role in market.
© The Authors, published by EDP Sciences 2020
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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