Open Access
Issue |
E3S Web Conf.
Volume 198, 2020
2020 10th Chinese Geosynthetics Conference & International Symposium on Civil Engineering and Geosynthetics (ISCEG 2020)
|
|
---|---|---|
Article Number | 04011 | |
Number of page(s) | 6 | |
Section | Urban Planning Engineering and Design Application | |
DOI | https://doi.org/10.1051/e3sconf/202019804011 | |
Published online | 26 October 2020 |
- H. Hasegawa, S. Seki: Analysis of international delay on very high-speed lsi/vlsi chips using an mis microship line model. Information on https://ieeexplore.ieee.org/document/1484110/(2010) [Google Scholar]
- E. Jones, F. Wang, D. Costinett: Review of commercial GaN power devices and GaN-based converter design challenges. Information on https://ieeexplore.ieee.org/document/7496807/(2016) [Google Scholar]
- S. Dimitrijev, J. Han, H. Moghadam, A. Aminbeidokhti: Power-switching applications beyond silicon: status and future prospects of SiC and GaN devices. Information on http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=68 42083(2015) [Google Scholar]
- N. Zhang, B. Moran, S. Denbaars, U. Mishra, X. Wang: Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTs. Information on http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=97 9575 (2001) [Google Scholar]
- M. Ishida, T. Ueda, T. Tanaka, D. Ueda: GaN on Si technologies for power dwitching fevices. Information on http://ieeexplore.ieee.org/document/6553144 (2013) [Google Scholar]
- N. Ikeda, Y. Niiyama, H. Kambayashi, Y. Sato, T. Nomura: GaN power transistors on si substrates for switching applications. Information on https://ieeexplore.ieee.org/document/6553144 (2010) [Google Scholar]
- A. Bindra: Wide-bandgap-based power devices: reshaping the power electronics landscape. IEEE Power Electronics Magazine, 2(l): 4247 (2015) [Google Scholar]
- [8] M. N. A. Aadit, S. G. Kirtania, F. Afrin, K. Alam, Q. D. M. Khosru: High Electron Mobility Transistors: Performance Analysis, Research Trend and Applications. Information on https://www.intechopen.com/books/different-types-of-field-effect-transistors-theory-and applications/high-electron-mobility-transistors-performance-analysis-research-trend-and-applications (2017) [Google Scholar]
- T. Ueda. Reliability issues in GaN and SiC power devices (978-1-4799-3317-4/14) p 3D.4.1.(2014) [Google Scholar]
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.