Surface morphology analysis of silicon doped with erbium atoms

Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan

^* Corresponding author: qahramon_fayz@mail.ru

Abstract

This scientific work presents an analysis of the structural and electrical properties of light-emitting structures based on a single crystal of silicon doped with the rare earth element. As a result of thermal treatment of the initial samples at a temperature of 1200 ºC, it was found that the surface relief width of the sample decreased by 1.5÷2 times and the surface height increased by 3 times. According to the atomic force microscope analysis, it was found that n-Si<Er> samples have nanostructured surface defects with a surface relief width of 20÷300 nm and a height of 9÷42 nm. It was found that impurity atoms have a significant effect on the quantitative parameters of the initial sample atoms. As a result of the introduction of Er atoms into the control sample, it was determined that the number of technological impurities (O, C) increased by 10-15% by introducing one of the rare-earth elements (Er).