Open Access
| Issue |
E3S Web Conf.
Volume 430, 2023
15th International Conference on Materials Processing and Characterization (ICMPC 2023)
|
|
|---|---|---|
| Article Number | 01012 | |
| Number of page(s) | 10 | |
| DOI | https://doi.org/10.1051/e3sconf/202343001012 | |
| Published online | 06 October 2023 | |
- S. U. Ay, CSSP., vol. 66, no. 2, pp. 213–221, Feb. (2011). [Google Scholar]
- A. Mesgarani, M. N. Alam, F. Z. Nelson, and S. U. Ay, Supply boosting technique for designing very low-voltage mixed-signal circuits in standard CMOS, in Proc. IEEE Int. Midwest Symp. Circuits Syst. Dig. Tech. Papers, Aug. (2010), pp. 893–896. [Google Scholar]
- B. J. Blalock, Body-driving as a Low-Voltage Analog Design Technique for CMOS technology, in Proc. IEEE Southwest Symp. Mixed-Signal Design, Feb. (2000), pp. 113–118. [Google Scholar]
- M. Maymandi-Nejad and M. Sachdev, IEEE Electron. Lett., vol. 39, no. 12, pp. 894–895, Jan. (2003). [CrossRef] [Google Scholar]
- Y. Okaniwa, H. Tamura, M. Kibune, D. Yamazaki, T.-S. Cheung, J. Ogawa, N. Tzartzanis, W. W. Walker, and T. Kuroda, IEEE J. Solid-State Circuits, vol. 40, no. 8, pp. (1680–1687), Aug. (2005). [CrossRef] [Google Scholar]
- B. Goll and H. Zimmermann, A 0.12 μm CMOS comparator requiring 0.5V at 600MHz and 1.5V at 6 GHz, in Proc. IEEE Int. Solid-State Circuits Conf., Dig. Tech. Papers, Feb. (2007), pp. 316–317. [Google Scholar]
- B. Goll and H. Zimmermann, A 65nm CMOS comparator with modified latch to achieve 7GHz/1.3mW at 1.2V and 700MHz/47μW at 0.6V, in Proc. IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. (2009), pp. 328–329. [Google Scholar]
- B. Goll and H. Zimmermann, IEEE Electron. Lett., vol. 43, no. 7, pp. 388–390, Mar. (2007). [CrossRef] [Google Scholar]
- P. M. Figueiredo and J. C. Vital, IEEE Trans. Circuits Syst. II, Exp. Briefs, vol. 53, no. 7, pp. 541–545, Jul. (2006). [CrossRef] [Google Scholar]
- Jamal, K., Chari, K. M., &Srihari, P. (2019). Microprocess. Microsys., 71, 102890. [CrossRef] [Google Scholar]
- Jamal, K., Srihari, P., Chari, K. M., &Sabitha, B., ARPN J. Eng. Appl. Sci., 13. (2018). [Google Scholar]
- Jamal, K., &Srihari, P., IJET, 8(2), 759-e. (2016). [Google Scholar]
- Jamal, K., Srihari, P., & Kanakasri, G., IJCTA, 9(12), 5591-5598.(2016). [Google Scholar]
- Karthik, C. S., Aishwarya, V., Jamal, K., Sravanthi, Y. S. S., Ch, P. C., & Suneetha, M. VI-characteristics and transient analysis of an EEPROM device. In 2023 7th International Conference on Trends in Electronics and Informatics (ICOEI) (pp. 308-315). IEEE. (2023, April). [Google Scholar]
- Varma, S., Chowdari, C. P., Jayanthi, D., Panigrahi, A. K., & Jamal, K. (2022, October). TCAD Simulation of a 10nm n-Channel Vertical Double Gate Silicon On Insulator MOSFET for Digital Applications. In 2022 13th International Conference on Computing Communication and Networking Technologies (ICCCNT) (pp. 1-6). IEEE. [Google Scholar]
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