Obtaining higher manganese silicide films with high thermoelectric properties

Tashkent State Technical University, Tashkent, Uzbekistan

^* Corresponding author: bekpulatov85@rambler.ru

Abstract

This article provides information about the process of obtaining a Mn₄Si₇ film by magnetron sputtering, its high thermoelectric properties, and the possibility of using the resulting film in instrument-making production. Using the magnetron sputtering method, a thin Mn₄Si₇ film was obtained, and the composition and structure were studied by a scanning electron microscope. Two-stage cleaning of the silicon surface was used in work. Resistivity was determined by the four-probe method, thermoelectric properties, by the two-probe method. The bandwidth of the Mn₄Si₇/SiO₂ film was measured on a high-precision spectrometer according to the law of light reflection. It is shown that the thermoelectric power of the Mn₄Si₇ film increases during the transition from the amorphous state to the nanocrystalline one, which is associated with the selective scattering of charge carriers at the boundaries of nanoclusters and Mn₄Si₇ on SiO₂/Si have high speed and high sensitivity. It is shown that this film can be used in thermal detectors radiation waves in the visible and IR ranges.