Issue |
E3S Web Conf.
Volume 383, 2023
International Scientific Conference Transport Technologies in the 21st Century (TT21C-2023) “Actual Problems of Decarbonization of Transport and Power Engineering: Ways of Their Innovative Solution”
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Article Number | 04040 | |
Number of page(s) | 7 | |
Section | Mechanical Engineering and New Energy Technologies | |
DOI | https://doi.org/10.1051/e3sconf/202338304040 | |
Published online | 24 April 2023 |
Changes in the electronic structure of the Si surface as a result of ion implantation
1
Tashkent State Technical University, Street University, 2A, 100095 Tashkent, Uzbekistan
2
Tashkent State Transport University, pass. 1st Temiryulchilar, 1, 100167 Tashkent, Uzbekistan
3
YEOJU Technical Institute in Tashkent, Yakkasaray district, str. Shota Rustaveli, 156, 100121 Tashkent, Uzbekistan
4
Tashkent State Pedagogical University, Bunyodkor avenue, 27, 100070 Tashkent, Uzbekistan
* Corresponding author: sardor.donaev@gmail.com
The composition, structure, and physicochemical properties of the surface and near-surface layers of silicon doped with low-energy (E0<5 keV) Ba+ and O2+ ions have been studied using a set of photoelectron and secondary electron spectroscopy methods. It has been established that in the process of ion implantation, chemical bonds are formed between the atoms of the alloying element and the matrix, the width of the energy bands and the density of electronic states in the bands change.
© The Authors, published by EDP Sciences, 2023
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