| Issue |
E3S Web Conf.
Volume 383, 2023
International Scientific Conference Transport Technologies in the 21st Century (TT21C-2023) “Actual Problems of Decarbonization of Transport and Power Engineering: Ways of Their Innovative Solution”
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|---|---|---|
| Article Number | 04041 | |
| Number of page(s) | 6 | |
| Section | Mechanical Engineering and New Energy Technologies | |
| DOI | https://doi.org/10.1051/e3sconf/202338304041 | |
| Published online | 24 April 2023 | |
Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon
1
Tashkent State Technical University, Street University, 2A, 100095 Tashkent, Uzbekistan
2
Tashkent State Pedagogical University, Bunyodkor avenue, 27, 100070 Tashkent, Uzbekistan
3
Materials Genome Institute, Shanghai University, Building 7, East Campus, 333 Nan Chen Road, Bao Shan District, Shanghai, China
* Corresponding author: sardor.donaev@gmail.com
Auger electron spectroscopy combined with ion etching was used to study the effect of ion doping on the distribution profiles of atoms in silicon in contact with its surface. It has been established that preliminary implantation of Ba+ ions with E0=0.5-1 keV leads to a sharp decrease (by a factor of 10-12) in the diffusion length of oxygen and nickel atoms.
© The Authors, published by EDP Sciences, 2023
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