Issue |
E3S Web Conf.
Volume 264, 2021
International Scientific Conference “Construction Mechanics, Hydraulics and Water Resources Engineering” (CONMECHYDRO - 2021)
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Article Number | 05037 | |
Number of page(s) | 7 | |
Section | Engineering Materials Science, Intelligent Transport Systems and Transport Logistics | |
DOI | https://doi.org/10.1051/e3sconf/202126405037 | |
Published online | 02 June 2021 |
Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films
Tashkent State Technical University, Tashkent, Uzbekistan
* Corresponding author: bekpulatov85@rambler.ru
Using the methods of electron spectroscopy and slow electron diffraction, we studied the processes of the formation of nanosized metal silicide films in the near-surface region of Si (111) and Si (100) during low-energy implantation of Ba ions and alkaline elements. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. The type of surface superstructures of thin silicide films has been established.
© The Authors, published by EDP Sciences, 2021
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