| Issue |
E3S Web of Conf.
Volume 402, 2023
International Scientific Siberian Transport Forum - TransSiberia 2023
|
|
|---|---|---|
| Article Number | 14018 | |
| Number of page(s) | 8 | |
| Section | Materials Chemistry and Physics | |
| DOI | https://doi.org/10.1051/e3sconf/202340214018 | |
| Published online | 19 July 2023 | |
Accumalations of impurity Ni atoms and their effect on the electrophysical properties of Si
Research Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, Uzbekistan
* Corresponding author: tna_1975@mail.ru
In this work, the electrophysical parameters of silicon doped with nickel by the diffusion method, are studied as well as the morphological parameters of micro- and nanoinclusions of nickel atoms formed in silicon. At the same time, the diffusion of nickel into silicon was carried out in a SUOL-4M furnace at a temperature of T=1573 K for t=2 hours. The results of studies of the temperature dependence of the concentration, mobility and resistivity of n-Siz<Ni> samples, obtained using the Hall effect method using the Ecopia HMS-7000 setup, are presented. The morphological parameters of impurity atom clusters in n-Si<Ni> samples were also studied and their images were obtained using a JSM-IT200 scanning electron microscope.
© The Authors, published by EDP Sciences, 2023
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