Open Access
| Issue |
E3S Web Conf.
Volume 552, 2024
16th International Conference on Materials Processing and Characterization (ICMPC 2024)
|
|
|---|---|---|
| Article Number | 01145 | |
| Number of page(s) | 12 | |
| DOI | https://doi.org/10.1051/e3sconf/202455201145 | |
| Published online | 23 July 2024 | |
- M. Kumar, P. Deosarkar, S. Inamdar and R.N. Mahanty, “Field Oriented Control of Traction PMSM Drive Using WBG Devices for EV Application, ” 2023 IEEE Renewable Energy and Sustainable E-Mobility Conference (RESEM), Bhopal, India, 2023, pp. 1–8,DOI: 10.1109/RESEM57584.2023.10236344. [Google Scholar]
- A.S. Abdelrahman, Z. Erdem, Y. Attia and M.Z. Youssef, “Wide Bandgap Devices in Electric Vehicle Converters: A Performance Survey, ” in Canadian Journal of Electrical and Computer Engineering, vol. 41, no. 1, pp. 45–54, winter 2018,DOI: 10.1109/CJECE.2018.2807780. [CrossRef] [Google Scholar]
- Kizilyalli, Isik C., Olga Blum Spahn, and Eric P. Carlson. “Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future.” ECS Transactions 109.8 (2022): 3. [CrossRef] [Google Scholar]
- N. Keshmiri, D. Wang, B. Agrawal, R. Hou and A. Emadi, “Current Status and Future Trends of GaN HEMTs in Electrified Transportation, ” in IEEE Access, vol. 8, pp. 70553–70571, 2020,DOI: 10.1109/ACCESS.2020.2986972. [CrossRef] [Google Scholar]
- M. Parvez, A.T. Pereira, N. Ertugrul, N.H.E. Weste, D. Abbott and S.F. Al-Sarawi, “Wide Bandgap DC–DC Converter Topologies for Power Applications, ” in Proceedings of the IEEE, vol. 109, no. 7, pp. 1253–1275, July 2021,DOI: 10.1109/JPROC.2021.3072170. [CrossRef] [Google Scholar]
- J. Millân, “A review of WBG power semiconductor devices, ” CAS 2012 (International Semiconductor Conference), Sinaia, Romania, 2012, pp. 57–66,DOI: 10.1109/SMICND.2012.6400696. [CrossRef] [Google Scholar]
- Ozpineci, Burak, and Leon M. Tolbert Comparison ofwide-bandgap semiconductors for power electronics applications. United States. Department of Energy, 2004. [Google Scholar]
- M.M. Garg and M. Kumar Pathak, “Performance Comparison of Non-ideal and Ideal Models of DC-DC Buck Converter, ” 2018 8th IEEE India International Conference on Power Electronics (IICPE), Jaipur, India, 2018, pp. 1–6,DOI: 10.1109/IICPE.2018.8709450. [Google Scholar]
- Infineon Technologies A.G., “Cool MOS Power Transistor”, SPP11N60C3, 2018 [Google Scholar]
- GAN Systems, “Bottom-side cooled 650 V E-mode GaN transistor”, GS66508P, 2018 [Google Scholar]
- ON Semiconductor, “Complementary Silicon Power Transistors”, 2N3055(NPN), 2005 [Google Scholar]
- GAN Systems, “Bottom-side cooled 650 V E-mode GaN transistor”, GS66508B, 2018. [Google Scholar]
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.