Open Access
E3S Web Conf.
Volume 391, 2023
4th International Conference on Design and Manufacturing Aspects for Sustainable Energy (ICMED-ICMPC 2023)
Article Number 01185
Number of page(s) 11
Published online 05 June 2023
  1. J. Appenzeller, “Carbon Nanotubes for High Performance Electronics-Progress and Prospect,” Purdue e-Pubs, (2008) [Google Scholar]
  2. Y. B. Kim, “Design methodology based on Carbon Nanotube Field Effect Transistor (CNFET),” Comp Eng Diss, (2011) [Google Scholar]
  3. J. Srinivas Rao, Suresh Kumar Tummala, Narasimha Raju Kuthuri, Comparative investigation of 15 Level and 17 level cascaded h-bridge MLI with cross h-bridge MLI fed permanent magnet synchronous motor, Indonesian Journal of Electrical Engineering and Computer Science, 21(2), pp: 723–734, (2020) [Google Scholar]
  4. A. Rahman, Jing Guo, S. Datta, and M.S. Lundstrom, “Theory of Ballistic Nanotransistors,” IEEE Transactions on Elect Dev, 50, No. 10, 1853–1864, Sept (2003) [CrossRef] [Google Scholar]
  5. S. R. Prasad S. B. K. Madhavi, and K. L. Kishore, “Design of Low-Leakage CNTFET SRAM Cell at 32nm Technology using Forced Stack Technique,” Int Jour of Eng Res and Appl (IJERA), ISSN:2248-9622,2, No. 1,805–808, January-February (2012) [Google Scholar]
  6. C. Venkataiah, K. Satyaprasad, T. Jayachandra Prasad, “Insertion of optimal number of repeaters in pipelined nano interconnects for transient delay minimization”, Circuit systems and signal processing, February, (2019). [Google Scholar]
  7. Tummala, S.K., Kosaraju, S. & Bobba, P.B. Optimized power generation in solar using carbon substrate for reduced greenhouse gas effect. Appl Nanosci 12, 1537–1543 (2022). [CrossRef] [Google Scholar]
  8. C. Venkataiah, K. Satyaprasad, T. Jayachandra Prasad, “FDTD algorithm to achieve absolute stability in performance analysis of SWCNT interconnects”, Jour of comp elect, June, (2018). [Google Scholar]
  9. S. R. Prasad S. B. K. Madhavi, and K. L. Kishore, “High-Performance Memory Cell Design at 32nm Technology based on CNTFET for Low-Power Embedded Systems,” Inter Jour of Adv in Sci and Tech (IJAST), 3, No. 4, 46–52, October (2011) [Google Scholar]
  10. Davu, S.R., Tejavathu, R. & Tummala, S.K. EDAX analysis of poly crystalline solar cell with silicon nitride coating. Int J Interact Des Manuf (2022). [Google Scholar]
  11. P. Mishra, A. Muttreja, N.K. Jha, FinFET Circuit Design, Springer, (2011) [Google Scholar]
  12. M. U. Mohammed, A. Nizam, and M. H. Chowdhury, “Performance Stability Analysis of SRAM Cells Based on Different FinFET Devices in 7nm Technology,” in Proceedings of the 2018 IEEE SOI-3D-Subthres Microelect TechUnif Conf (S3S), Burlingame, CA, USA, 1–3, (2018) [Google Scholar]
  13. Suresh Kumar Tummala, Phaneendra Babu Bobba & Kosaraju Satyanarayana (2022) SEM & EDAX analysis of super capacitor, Advances in Materials and Processing Technologies, 8:sup 4, 2398–2409. [CrossRef] [Google Scholar]
  14. S.G. Sai, N. Alivelu, P.C. Manga, and Sekhar, “Design and Simulation of FinFET based digital circuits for low power applications,” in Proceedings of the 2020 IEEE Inter Studs' Conf on Electr, Elect and Comp Sci (SCEECS), Bhopal, India, 1–5, (2020) [Google Scholar]
  15. V. Sikarwar, S. Khandelwal, and S. Akashe, “Optimization of Leakage Current in SRAM Cell using Shorted Gate DG FinFET,” in Proceedings of the 3rd Inter Conf on Adv Comp and Comm Tech (ACCT), Rohtak, 166–170, (2013) [Google Scholar]
  16. Tummala, S.K., Indira Priyadarshini, T., Morphological Operations and Histogram Analysis of SEM Images using Python, Indian Journal of Engineering and Materials Sciences, 2022, 29(6), pp. 794–798 [Google Scholar]
  17. Liu, Z., Kursun, V., “Characterization of A Novel Nine-Transistor SRAM Cell,” IEEE Trans on Ver Lar-ScaInte (VLSI) Sys, 16, 488–492, (2008) [CrossRef] [Google Scholar]
  18. Y. Yoon, G. Fiori, S. Hong, G. Iannaccone, and J. Guo, “Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs,” IEEE Trans on Elect Dev, 55, No. 9, 2314–2323, (2008) [CrossRef] [Google Scholar]
  19. M. Gholipour, Y. Chen, A. Sangai, N. Masoumi, and D. Chen., “Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs with Performance Snalysis,” IEEE Trans on Ver Lar-ScaInte (VLSI) Sys, 24, No. 2,650–663, (2016) [CrossRef] [Google Scholar]
  20. Karthik Rao, R., Bobba, P.B., Suresh Kumar, T., Kosaraju, S., Feasibility analysis of different conducting and insulation materials used in laminated busbars, Materials Today: Proceedings, 2019, 26, pp. 3085–3089. [Google Scholar]
  21. P. Singh, R. Chandel, and N. Sharma, “Stability Analysis of SRAM Cell using CNT And GNR Field Effect Transistors,” in Proceedings of the 10th International Conference on Contemporary Computing (IC3), 1–6, Noida, India, August (2017) [Google Scholar]
  22. Predictive Technology Model (PTM), 2012. (last accessed in December 2020) [Google Scholar]
  23. C. Venkataiah, K. Satyaprasad, T. Jayachandra Prasad, “Signal integrity analysis for coupled SWCNT interconnects using stable recursive algorithm”, Microelect Jour, volume. 74,13–23, April, (2018). [CrossRef] [Google Scholar]
  24. C. Venkataiah, V.N.V. Satya Prakash, K. Mallikarjuna and T. Jayachandra Prasad, “Investigating the effect of chirality, oxide thickness,temperature and channel length variation on a threshold voltage of MOSFET, GNRFET, and CNTFET”, Jour of mech of conti and math sci, 232–244, September, (2019). [Google Scholar]
  25. Vijay Rao Kumbhare, Punya Prasanna Paltani, C. Venkataiah, and Manoj Kumar Majumder “Analytical Study of Bundled MWCNT and Edged-MLGNR Interconnects: Impact on Propagation Delay and Area”, IEEE Trans on Nanotec,18, 606–610, June, (2019). [CrossRef] [Google Scholar]
  26. M. Gholipour, Y. Chen, A. Sangai and D. Chen, “Highly Accurate SPICE-Compatible Modeling for Single- and Double-Gate GNRFETs with Studies on Technology Scaling,” in Proceedings of the 2014 Design, Automation & Test in Europe Conference & Exhibition (DATE), Dresden, Germany, 1–6, (2014) [Google Scholar]
  27. C. Venkataiah, K. Satyaprasad, T. Jayachandra Prasad, “Crosstalk induced performance analysis of single walled carbon nanotube interconnects using stable finite difference time domain model”, Jour of nanoelect and optoelect,12,1–10, June, (2018). [Google Scholar]
  28. Y. Chen, M. Gholipour, A. Rogachev, A. Sangai, and D. Chen, “SPICE Model of Graphene Nanoribbon FETs (GNRFET),” 2013. (last accessed in December 2020) [Google Scholar]
  29. M. Elangovan and K. Gunavathi, “Stability Analysis of 6T CNTFET SRAM Cell for Single and Multiple CNTs,” in Proceedings of the 4th Inter Conf on Dev, Circ and Sys (ICDCS), Coimbatore, India, 63–67, (2018) [Google Scholar]

Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.

Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.

Initial download of the metrics may take a while.